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59N10DP L0650 02010 R1163X 7461096 01456 BZM55B27 SR11G
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  b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 0 0 6 6 5 5 8 8 n n d d ver.2.0 page 1 of 3 since 1981 package dimensions : 3.00(.118) min. 75.80(2.984) 5.08x6=30.48(1.200) 0.80(.031) pin 1. + 13.30(.524) 121.50(4.783) 10.0(.394) 91.40(3.598) notes: 1. all dimensions are in millimeters(inches). 2. tolerance is 0.25mm(.01")unless otherwise specified. 3. specifications are subject to change without notice. features : 1. 4.78 inch (121.50mm) matrix height. 2. dot size 10.0 mm. 3. low power requirement. 4. excellent characters appearance. 5. solid state reliability. 6. multiplex drive , column cathode com. and row anode com. 7. single color available. 8. categorized for luminous intensity. 9. stackable vertically and horizontally. description : 1. the BM-40658ND is a 121.5mm (4.78") matrix height 58 dot matrix display. 2. this product use super red chips, which are made from algaas on gaas substrate. 3. this product have a black face and white dots. 4. this product doesn't contain restriction substance, comply rohs standard. internal circuit diagram :
b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 0 0 6 6 5 5 8 8 n n d d ver.2.0 page 2 of 3 since 1981 absolute maximum ratings(ta=25 ) parameter symbol rating unit power dissipation per dot pd 160 mw forward current per dot i f 30 ma peak forward current per dot i fp (duty 1/10, 1khz) 150 ma reverse voltage per dot v r 5 v operating temperature topr -40 ~80 - storage temperature tstg -40 ~85 - soldering temperature (1/16" from body) ts o l 260 for 5 seconds - electrical and optical characteristics(ta=25 ) parameter symbol condition min. typ. max. unit forward voltage per dot v f i f =10ma - 3.4 5.0 v luminous intensity per dot iv i f =10ma - 20 - mcd reverse current per dot i r v r =5v - - 100 a peak wave length p i f =10ma - 660 - nm dominant wave length d i f =10ma - 643 - nm spectral line half-width ? i f =10ma - 20 - nm
b b r r i i g g h h t t l l e e d d e e l l e e c c t t r r o o n n i i c c s s c c o o r r p p . . b b m m - - 4 4 0 0 6 6 5 5 8 8 n n d d ver.2.0 page 3 of 3 since 1981 typical electro-optical characteristics curves (25 ambient temperature unless otherwise noted) forward voltage (v) f o r w a r d c u r r e n t ( m a ) 12345 0 10 20 30 40 50 fig.2 forward current vs. forward voltage wavelength(nm) r e l a t i v e r a d i a n t i n t e n s i t y fig.1 relative radiant intensity vs. wavelength ambient temperature ta( c) forward current(ma) r e l a t i v e l u m i n o u s i n t e n s i t y -40 -20 0 20 40 60 0 0.5 1.0 1.5 2.0 2.5 3.0 fig.3 relative luminous intensity vs. ambient temperature fig.4 relative luminous intensity vs. forward current 10 20 30 40 50 1.0 2.0 3.0 0 570 600 0.5 630 660 1.0 750 690 720 ambient temperature ta( c) fig.5 forward current f o r w a r d c u r r e n t ( m a ) 0 10 20 40 20 60 40 50 derating curve vs. 80 100 30 120 ambient temperature ( @ 2 0 m a ) ( @ 2 0 m a ) r e l a t i v e l u m i n o u s i n t e n s i t y 0.0


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